6inch sic substrates, sic ingot ,sic crystal ingots ,sic crystal block, sic semiconductor substrates,6inch Silicon Carbide Wafer,4H-semi SiC wafer,6inch 4H-N type dummy grade sic wafer for test,

1. Description

Property	4H-SiC, Single Crystal	6H-SiC, Single Crystal
Lattice Parameters	a=3.076 Å c=10.053 Å	a=3.073 Å c=15.117 Å
Stacking Sequence	ABCB	ABCACB
Mohs Hardness	≈9.2	≈9.2
Density	3.21 g/cm3	3.21 g/cm3
Therm. Expansion Coefficient	4-5×10-6/K	4-5×10-6/K
Refraction Index @750nm	no = 2.61 ne = 2.66	no = 2.60 ne = 2.65
Dielectric Constant	c~9.66	c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)	a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K
Thermal Conductivity (Semi-insulating)	a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K	a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K
Band-gap	3.23 eV	3.02 eV
Break-Down Electrical Field	3-5×106V/cm	3-5×106V/cm
Saturation Drift Velocity	2.0×105m/s	2.0×105m/s

2. Material Size describtion

6 inch diameter Silicon Carbide (SiC) Substrate Specification


Grade		Z grade	P grade	R grade	D grade

		ZERO MPD	Production	Research Grade	Dummy Grade

Diameter		150mm±0.5 mm

Thickness		350 μm±25μm or 500±25um or by customized size

Wafer Orientation		Off axis : 4.0° toward <1120 > ±0.5° for 4H-N

Micropipe Density		≤1cm-2	≤5 cm-2	≤15 cm-2	≤50 cm-2

Resistivity	4H-N	0.015~0.028 Ω·cm

	4/6H-SI	>1E5 Ω·cm

Primary Flat		{10-10}±5.0°

Primary Flat Length		47.5mm±2.5 mm

Edge exclusion		3mm

TTV/Bow /Warp		≤15μm /≤40μm /≤60μm

Roughness		Polish Ra≤1 nm

		CMP Ra≤0.5 nm

		None	None	1 allowed, ≤1 mm
Cracks by high intensity light

Hex Plates by high intensity light		Cumulative area≤1 %	Cumulative area≤1 %	Cumulative area≤3 %

		None	Cumulative area≤2 %	Cumulative area≤5%
Polytype Areas by high intensity light

		3 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length	8 scratches to 1×wafer diameter cumulative length
Scratches by high intensity light

Edge chip		None	3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each

Contamination by high intensity light		None