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6inch sic substrates ,6inch sic wafers, sic crystal ingots ,
sic crystal block ,sic semiconductor substrates,Silicon Carbide Wafer
6 inch diameter, Silicon Carbide (SiC) Substrate Specification | ||||||||
Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | ||||
Diameter | 150.0 mm±0.2mm | |||||||
ThicknessΔ | 350 μm±25μm or 500±25un | |||||||
Wafer Orientation | Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : <0001>±0.5° for 6H-SI/4H-SI | |||||||
Primary Flat | {10-10}±5.0° | |||||||
Primary Flat Length | 47.5 mm±2.5 mm | |||||||
Edge exclusion | 3 mm | |||||||
TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | |||||||
Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 | ≤100 cm-2 | ||||
Resistivity | 4H-N | 0.015~0.028 Ω·cm | ||||||
4/6H-SI | ≥1E5 Ω·cm | |||||||
Roughness | Polish Ra≤1 nm | |||||||
CMP Ra≤0.5 nm | ||||||||
Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |||||
Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤2% | Cumulative area ≤5% | |||||
Polytype Areas by high intensity light | None | Cumulative area≤2% | Cumulative area≤5% | |||||
Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |||||
Edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |||||
Contamination by high intensity light | None |