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2inch 4inch 6inch GaN-ON-sapphire Blue led epi-wafer PSS for HEMT
As a leading manufacturer and supplier of GaN (Gallium Nitride) epi wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave electronics applications with a thickness of 2 on C-plane sapphire substrates 430um inch, 4 inch 520um, 650um and 6 inch 1000-1300um, the normal value of GaN buffer layer is 2-4um; we can also provide customized structures and parameters according to customer requirements.
GaN on Sapphire Templates
GaN on sapphire templates are available in diameters from 2" up to 6" and consist of a thin layer of crystalline GaN grown by HVPE on a sapphire substrate. Epi-ready templates now available
As a leading manufacturer and supplier of GaN (Gallium Nitride) epi wafers, we offer 2-6inch GaN on sapphire epi wafers for microwave electronics applications with a thickness of 2 on C-plane sapphire substrates 430um inch, 4 inch 520um, 650um and 6 inch 1000-1300um, the normal value of GaN buffer layer is 2-4um; we can also provide customized structures and parameters according to customer requirements.
Main features (blue/green LED structure):
good crystal quality
High-performance optoelectronic devices
For more information, please visit our website other page;
send us email at eric-wang@galliumnitridewafer.com
ZMSH is a leading manufacturer of semiconductor material in China. ZMSH develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. Our technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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