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6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates

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6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates

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Brand Name :zmsh
Model Number :6INCH GaAs wafer
Certification :ROHS
Place of Origin :china
MOQ :10pcs
Price :by case
Supply Ability :500pcs/month
Delivery Time :1-4weeks
Packaging Details :PET film in 100-grade cleaning room
material :MONOcrystal GaAs
industry :semicondutor wafer For ld or led
application :semiconductor substrate, led chip, optical glass window,device substrates
method :CZ
size :2inch~6inch
Thickness :0.425mm
surface :cmp/etched
doped :Si-doped
MOQ :10PCS
grade :research grade/dummy grade
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6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates


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GaAs wafer

GaAs Wafers GaAs Substrate Wafers GaAS substrate wafers GaAS is a semiconductor material with superior properties of high frequency, high electron migration, high electron performance, low salivary sound and linear goodness. It is widely used in the optoelectronics and microelectronics industries. In the optoelectronics industry, GaAS substrate wafers can be used for manufacturing LED(light emitting tube), LD(teaching light garden), photovoltaic devices, etc. In the field of microelectronics industry, it can be used to make MESFET(metal semiconductor field effect leather tube), HEMT(high electron mobility transistor),HBT(heterojunction bipolar transistor),IC, microwave diode,Hall device, etc.

Application
Microwave diode, Gunn diode, varactor diode, etc.
Microwave transistors: field effect transistor (FET), high electron mobility transistor (HEMT), heterojunction bipolar transistor (HBT), etc.
Integrated circuit: microwave monolithic integrated circuit (MMIC), ultra-high speed integrated circuit (VHSIC), etc.
Hall element
Specification detail
GaAs (Gallium Arsenide) for LED Applications
Item Specifications Remarks
Conduction Type SC/n-type
Growth Method VGF
Dopant Silicon
Wafer Diamter 2, 3 & 4 inch Ingot or as-cut available
Crystal Orientation (100)2°/6°/15° off (110) Other misorientation available
OF EJ or US
Carrier Concentration (0.4~2.5)E18/cm3
Resistivity at RT (1.5~9)E-3 Ohm.cm
Mobility 1500~3000 cm2/V.sec
Etch Pit Density <500/cm2
Laser Marking upon request
Surface Finish P/E or P/P
Thickness 220~350um
Epitaxy Ready Yes
Package Single wafer container or cassette

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6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates


ABOUT OUR ZMKJ

ZMKJ locates in the city of Shanghai, Which is the best city of China, and our factory is founded
in Wuxi city in 2014.We specialize in processing a varity of materials into wafers, substrates
and custiomized optical glass parts.components widely used in electronics, optics,
optoelectronics and many other fields. We also have been working closely with many domestic
and oversea universities, research institutions and companies, provide customized products
and services for their R&D projects.
It's our vision to maintaining a good relationship of cooperation with our all customers by our
good reputatiaons. so we also can provide some other materials substrates as like: SiC wafer
6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates
Packaging – Logistcs
Worldhawk concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process!
6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates
FAQ –
Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and by FOB
and pay condition of 50% deposit,50% before delivery.
Q: What's the delivery time?
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 3 workweeks after order.

Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.

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