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2Inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED Application
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GaAs wafer
Gallium arsenide is a compound composed of metallic gallium and semi-metallic arsenic in atomic ratio 1:1. It has a gray metallic luster and its crystal structure is sphalerite type. Gallium arsenide had been synthesized as early as 1926. Its semiconductor properties were confirmed in 1952. The devices made of gallium arsenide materials have good frequency response, high speed and high operating temperature, which can meet the needs of integrated optoelectronics. It is currently the most important optoelectronic material, but also the most important microelectronic material after silicon material, it is suitable for the manufacture of high-frequency, high-speed devices and circuits.
| Type/Dopant 导电类型/掺杂元素 | Semi-Insulated | P-Type/Zn | N-Type/Si | N-Type/Si |
| Application 应用 | Micro Eletronic | LED | Laser Diode | |
| Growth Method 长晶方式 | VGF | |||
| Diameter 直径 | 2", 3", 4", 6" | |||
| Orientation 晶向 | (100)±0.5° | |||
| Thickness 厚度 (µm) | 350-625um±25um | |||
| OF/IF 参考边 | US EJ or Notch | |||
| Carrier Concentration 载流子浓度 | - | (0.5-5)*1019 | (0.4-4)*1018 | (0.4-0.25)*1018 |
| Resistivity 电阻率 (ohm-cm) | >107 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 | (1.2-9.9)*10-3 |
| Mobility 电子迁移率 (cm2/V.S.) | >4000 | 50-120 | >1000 | >1500 |
| Etch Pitch Density 位错密度(/cm2) | <5000 | <5000 | <5000 | <500 |
| TTV 平整度 [P/P] (µm) | <5 | |||
| TTV 平整度 [P/E] (µm) | <10 | |||
| Warp 翘曲度 (µm) | <10 | |||
| Surface Finished 表面加工 | P/P, P/E, E/E | |||
ABOUT OUR ZMKJ
Q: What's the MOQ?
(1) For inventory, the MOQ is 5pcs.
(2) For customized products, the MOQ is 10pcs-30pcs.
Q: Do you have inspection report for material?
We can supply detail report for our products.