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4inch 6inch X-cut LN 400nm LiNbO3 thin film on silicon substrate

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4inch 6inch X-cut LN 400nm LiNbO3 thin film on silicon substrate

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Brand Name :zmkj
Model Number :LT-001
Place of Origin :CHINA
MOQ :25pcs
Price :by case
Supply Ability :5000pcs/month
Delivery Time :15-30days
Packaging Details :PET Films or 25pcs casstle case by 100 grade cleaning room
materials :LiTaO3 single crystal
industry :semiconductor wafer,saw wafer,optical wafer
application :5G,SAW device,optical glass,
color :yellow, red,black
size :4inch
orientation :Y-42° commen
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4inch 6inch X-cut LN 400nm LiNbO3 thin film on silicon substrate

Introduction

Single crystal lithium niobate (LN) is a very attractive photonic material with wide transparent window, high refractive index and large acousto-optic, nonlinear and electro-optic coefficients. The conversion of bulk LN crystals into thin films of lithium niobate (TFLN) further enables the preparation of high-performance integrated photonic devices for classical and quantum applications such as low-loss waveguides, high-quality micro-resonators, high-speed modulators, and high-efficiency optical inverters. To achieve integrated active photonic devices, erbium-doped lithium niobate films have recently been used to demonstrate microcavity lasers, waveguide amplifiers, and quantum emitters.

Application

Lithium niobate crystal has excellent piezoelectric, electro-optic, acousto-optic, nonlinear and other properties. It has a wide range of uses in military and civilian fields, and the main uses are as follows:

1. Optical fiber communication---For example, waveguide modulators used in optical communication, more than 60% of the modulators are made of lithium niobate. The use of lithium niobate thin film is one million times smaller than traditional device products, with high performance, low power consumption and low cost.

2. Electronic devices --- high-quality surface acoustic wave devices, such as filters, delay lines, etc.

3. Information storage---Tohoku University in Japan has developed the reading and writing technology, and the information storage capacity of one piece of the same area is equivalent to the storage capacity of 100,000 DVDs (70T).

Specification

Orientation

36°Y-cut±0.2° 42°Y-cut±0.2° X-cut±0.2°
Diameter 100±0.3mm ,
1st OF Flat 32±2mmperpendicular to X-axis±0.2° 32±2mm, perpendicular to 112°Y±0.2°
2st OF Flat 10±2mm CW270°from 1st OF 10±2mm CW315°from 1st OF 10±2mm CW315° Or 270°from 1st OF
Thickness 200~250±25um,300-350±25um,500±25um or by customized
Front surface "+",Ra<1nm,
Back surface GC#1000, GC#2000 Lapped
LTV <1um,at5x5mm zone
BOW ≤25um

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4inch 6inch X-cut LN 400nm LiNbO3 thin film on silicon substrate4inch 6inch X-cut LN 400nm LiNbO3 thin film on silicon substrate

FAQ

Q. Do you have any stock of wafer or ingots?

yes,aslike 3inch,4inch commen size substrates wafers are in stocks.


Q. Where is your company located?
Our company located in shanghai,China. factory is in wuxi city.

Q. How long will take to get the products?
Generally it will take 1~4 weeks to process and then delivery.

It is depend on the quantity and the size of the products.

Q: How about pay term & delivery ?

T/T 50%deposit and left part before delivery by FOB .

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