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Description:
1. Indium antimonide is a direct band gap semiconductor material that belongs to the infrared spectrum.
2. Indium antimonide (InSb) is a compound semiconductor material consisting of indium (In) and antimony (Sb) elements.
3. Indium antimonide also has high carrier mobility and low noise characteristics in high-speed electronics and low noise amplifiers.
4. Its chemical formula is InSb. Indium antimonide is an important semiconductor material with special electronic and optical properties,
so it has a wide range of applications in the field of optoelectronics and electronics.
5. In addition, indium antimonide can also be used in quantum effect devices, such as quantum well structures and quantum dot devices,
because of its excellent quantum properties, such as quantum limiting effects and quantum tuning properties.
1. Fast response: InSb detector has a fast response time and can capture changes in infrared radiation signals in real time.
2. Low noise: InSb materials have low noise levels, which can provide clear infrared images and accurate spectral information.
3. High sensitivity: InSb material has a high sensitivity in the mid-infrared band, which can effectively detect and convert infrared radiation.
4. Low temperature operation: InSb detectors usually need to work at lower temperatures, usually below 77K (liquid nitrogen temperature)
5. Wide band range: InSb materials have a wide range of infrared radiation induction, which can cover the mid-infrared band (usually 2-5 microns) and part of the long-wave infrared band (up to about 10 microns).
Technical Parameters:
| Single crystal | InSb |
| Diameter | 2‘’ 3‘‘(+/-0.3mm) |
| Thickness | 500/600(+/-25um) |
| Dopant | None |
| Conduction type | N |
| Carrier concentration(cm-3) | <3E15 |
| Dislocation density(cm-2) | <2*10² |
| Lattice constant | 0.648nm |
| Molecular Weight | 236.58 |
| Fusing Point | 527°C |
| density | 5.78g/cm3 |
| Band Gap | 0.17eV(300K) |
| 0.23eV(80K) |
Applications:
| Infrared imagery | InSb crystal materials are widely used in infrared imaging. |
| High speed electronic device | due to their high carrier mobility and low electronic quality, can be used to manufacture high-speed electronic devices. |
| Spectrometers and optics | InSb crystal materials are widely used in the manufacture of infrared radiation detectors. |
| Spectral analysis | InSb crystal materials can be used for infrared spectral analysis due to their transparency and high sensitivity in the infrared band. |
| Quantum well device | Using the quantum well structure of InSb chip, a series of quantum well devices can be manufactured |
| Radiation detection | InSb crystal materials are widely used in the manufacture of infrared radiation detectors. |
| Thermoelectric material | InSb chips are able to convert thermal energy into electricity for applications, such as thermoelectric power generation and temperature measurement. |
Other related product:
SIC Wafers:
FAQ:
Q: What is the Certification of Te-InSb?
A: The Certification of Te-InSb is ROHS.
Q: What is the Brand Name of Te-InSb?
A: The Brand Name of Te-InSb is ZMSH.
Q: Where is the Place of Origin of Te-InSb?
A: The Place of Origin of Te-InSb is CHINA.
Q: What is the MOQ of Te-InSb at one time?
A: The MOQ of Te-InSb is 25pcs at one time.