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SHANGHAI FAMOUS TRADE CO.,LTD

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Home / Products / SiC Substrate / CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power /

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LiNbO3 Wafer

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IC Silicon Wafer

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Fused Quartz Plate

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Lab Wrapper

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SHANGHAI FAMOUS TRADE CO.,LTD
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CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power
CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power
  • CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power
  • CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power
  • CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power
  • CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power
  • CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power
Products Detailed
CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch epitaxy thickness 2.5-120 um for electronic power Product Descriptions SiC Epitaxy Wafers: These are ...
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anode aluminum profile silicon carbide conductivity silicon carbide electrical conductivity

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