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- support customized ones with design artwork
- a cubic crystal (3C SiC), made by SiC monocrystal
- High hardness, Mohs hardness reaches 9.2, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature environments.
- wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.
The 4-inch 3C-N type silicon carbide (SiC) wafer is characterized by its cubic crystal structure, differing from the hexagonal structure typically seen in 4H-SiC wafers.
In 3C-SiC, silicon and carbon atoms are arranged in a cubic lattice, similar to the diamond structure, giving it unique properties that stand out in certain applications.
One of the major advantages of 3C-SiC is its higher electron mobility and saturation velocity.
Compared to 4H-SiC, 3C-SiC allows for faster electron movement and higher power handling capability, which makes it a promising material for power electronic devices.
This property, combined with the relative ease of manufacturing and lower cost, positions 3C-SiC as a more cost-effective solution in large-scale production.
Moreover, 3C-SiC wafers are particularly suitable for high-efficiency power electronic devices.
The material’s excellent thermal conductivity and stability enable it to perform well in harsh conditions involving high temperatures, pressure, and frequencies.
As a result, 3C-SiC is ideal for use in electric vehicles, solar inverters, and energy management systems, where high efficiency and reliability are critical.
Currently, 3C-SiC devices are primarily built on silicon substrates, though challenges remain due to lattice and thermal expansion coefficient mismatches, which affect performance.
However, the development of bulk 3C-SiC wafers is a growing trend, expected to drive significant advancements in the power electronics industry, particularly for devices in the 600V-1200V voltage range.
| Propery | N-type 3C-SiC, Single Crystal |
| Lattice Parameters | a=4.349 Å |
| Stacking Sequence | ABC |
| Mohs Hardness | ≈ 9.2 |
| Density | 2.36 g/cm3 |
| Therm. Expansion Coefficient | 3.8×10-6/K |
| Refraction Index @750nm | n=2.615 |
| Dielectrc Constant | c~9.66 |
| Thermal Conductivity | 3-5 W/cm·K@298K |
| Band-Gap | 2.36 eV |
| Break-Down Electrical Field | 2-5×106V/cm |
| Saturation Drift Velocity | 2.7×107m/s |
*Furthermore, we accept customisation if you have spec requirements.
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2.2inch 4H-N Silicon Carbide SiC Substrate Thickness 350um 500um SiC wafer Prime Grade Dummy Grade
1. Q: Does 3C-N SiC need to be replaced frequently?
A: No, 3C-N SiC does not need to be replaced frequently due to its exceptional durability, thermal stability, and resistance to wear and tear.
2. Q: Can the colour of 3C-N sic be changed?
A: The color of 3C-SiC can theoretically be altered through surface treatments or coatings, but this is not common. Altering the material's color could impact its optical, thermal, or electronic properties, so it must be done carefully to avoid negative performance effects.