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- support customized ones with design artwork
- a hexagonal crystal (4H SiC), made by SiC monocrystal
- High hardness, up to 9.2 Mohs, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature environments.
- wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.
Description of 4H-SEMI SiC
4H-Semi SiC wafers refer to 4H-semi-insulating silicon carbide (SiC) wafers.
Such wafers are usually made by cutting and processing high-purity 4H-SiC crystals.
4H-SiC is a SiC crystal with a specific crystal structure, in which silicon (Si) atoms and carbon (C) atoms are arranged in a specific way to form a lattice structure.
4H-SiC wafers have attracted much attention due to their importance in the semiconductor industry.
4H-SiC has a wide range of applications in power electronics, RF and microwave devices, optoelectronic devices, and high-temperature and high-pressure applications.
Semi-insulating 4H-SiC wafers generally exhibit low carrier concentrations and high insulation properties, and are suitable for many high-power, high-frequency, and high-temperature applications.
These 4H-Semi SiC wafers are often used to manufacture various types of devices, such as power MOSFETs, power diodes, RF power amplifiers, photoelectric sensors, etc.
Their excellent performance, high voltage resistance, high thermal conductivity, and stability at high temperatures and high pressures make these wafers play a key role in various industrial and scientific research applications.
Details of 4H-SiC
Each type of SiC wafer has its own physical details.
| SUBSTRATE PROPERTY | Production Grade | Dummy Grade |
| Diameter | 10mm | |
| Surface Orientation | on-axis: {0001} ± 0.2° for SEMI type; | |
| off-axis: 4° toward <11-20> ± 0.5° for N type | ||
| Primary Flat Orientation | <11-20> ± 5.0˚ | |
| Secondary Flat Orientation | 90.0˚ CW from Primary ± 5.0˚, silicon face up | |
| Primary Flat Length | 16.0 mm ± 1.65 mm | |
| Secondary Flat Length | 8.0 mm ± 1.65 mm | |
| Wafer Edge | Chamfer | |
| Micropipe Density | ≤5 micropipes/cm2 | ≤50 micropipes/cm2 |
| Polytype Areas by High-Intensity Light | None permitted | ≤10% area |
| Resistivity | 0.015~0.028Ω·cm | (area 75%) |
| 0.015~0.028Ω·cm | ||
| Thickness | 5mm | |
| TTV | ≤10 μm | ≤15 μm |
| BOW | ≤10 μm | ≤15 μm |
| Warp | ≤25 μm | |
| Surface Finish | Double Side Polish, Si Face CMP (chemical polishing) | |
| Surface Roughness | CMP Si Face Ra≤0.5 nm | N/A |
| Cracks by High-Intensity Light | None permitted | |
| Edge Chips/Indents by Diffuse Lighting | None permitted | Qty.2 <1.0 mm width and depth |
| Total Usable Area | ≥90% | N/A |
| Note: Customized specifications other than the above parameters are acceptable. | ||
*Please feel free to contact us if you have further customized requirements
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FAQ
1. Q: What is the manufacturing process of 4H-Semi SiC cutting blades?
A: Manufacturing 4H-semi-insulating silicon carbide (SiC) cutting blades requires a series of complex process steps, including crystal growth, cutting, grinding and polishing.
2. Q: What is the future prospect of 4H-SEMI SiC
A: They look promising due to its unique properties and the increasing demand for high-performance semiconductor materials in various industries