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2inch Semi-Insulating Indium Phosphide InP Epitaxial Wafer for LD Laser Diode,semiconductor epitaxial wafer, 3inch InP wafer, single crystal wafer 2inch 3inch 4inch InP substrates for LD application, semiconductor wafer, InP Laser Epitaxial Wafer
Features of InP Laser Epitaxial Wafer
- use InP wafers to manufacture
- support customized ones with design artwork
- direct bandgap, emit light efficiently, used in lasers.
- in the wavelength range of 1.3μm to 1.55μm, quantum well structures
- using techniques such as MOCVD or MBE, etching, metallization, and packaging to achieve the final form of the device
More about InP Laser Epitaxial wafer
InP epitaxial wafers are high-quality thin films based on indium phosphide (InP) materials, which are widely used in the manufacture of optoelectronics and high-frequency electronic devices.
Grown on InP substrates by techniques such as metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE), epitaxial wafers have excellent crystalline quality and controllable thickness.
The direct bandgap characteristics of this epitaxial wafer make it perform well in lasers and photodetectors, especially for optical communication applications in the 1.3μm and 1.55μm wavelength range, ensuring low-loss and high-bandwidth data transmission.
At the same time, the high electron mobility and low noise characteristics of InP epitaxial wafers also give it significant advantages in high-speed and high-frequency applications.
In addition, with the continuous development of integrated optoelectronic circuits and optical fiber communication technology, the application prospects of InP epitaxial wafers are becoming more and more broad, and it has become an indispensable and important material in modern optoelectronic devices and systems.
Its application in sensors, lasers and other high-performance electronic devices has promoted the advancement of related technologies and laid the foundation for future scientific and technological innovation.
Details of InP Laser Epitaxial Wafer
| Product Parameters | DFB epitaxial wafer | High Power DFB Epitaxial Wafer | Silicon Photonics Epitaxial Wafer |
| rate | 10G/25G/50G | / | / |
| wavelength | 1310nm | ||
| size | 2/3 inch | ||
| Product Features | CWDM 4/PAM 4 | BH tech | PQ /AlQ DFB |
| PL Wavelength control | Better than 3nm | ||
| lPL Wavelength uniformity | Std.Dev better than 1nm @inner | ||
| Thickness control | 42mmBetter than +3% | ||
| Thickness uniformity | Better than +3% @inner 42mm | ||
| Doping control | Better than +10% | ||
| P-lnP doping (cm-3) | Zn doped; 5e17 to 2e18 | ||
| N-InP doping (cm-3) | Si doped; 5e17 to 3e18 | ||
More samples of InP Laser Epitaxial Wafer
*We accept the customized requirements
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FAQ
1. Q: What about the cost InP laser epitaxial wafers compared with other wafers?
A: The cost of InP laser epitaxial wafers generally tends to be higher than that of other types of wafers, such as silicon or gallium arsenide (GaAs).
2. Q: What about the future prospect of InP laser epitaxial wafers?
A: The future prospects of InP laser epitaxial wafers are quite promising.