SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD For The Good Reputation,By The Best Quality ,With The Fastest Efficiency.
Add to Cart
- support customized ones with design artwork
- a hexagonal crystal (4H SiC), made by SiC monocrystal
- high hardness, Mohs hardness reaches 9.2, second only to diamond.
- excellent thermal conductivity, suitable for high-temperature environments.
- wide bandgap characteristics, suitable for high-frequency, high-power electronic devices.
P-type SiC substrate is an important semiconductor material widely used in high-power and high-frequency electronic devices. By doping trivalent elements (such as aluminium or gallium), the P-type SiC substrate forms P-type characteristics, which enables the material to provide good electrical conductivity and high carrier concentration. Its excellent thermal conductivity and high breakdown voltage enable it to maintain stable performance under extreme conditions.
P-type SiC substrate has excellent high-temperature stability and radiation resistance and can work normally in high-temperature environments. Compared with traditional silicon materials, 4H-SiC substrates show lower energy loss under high electric fields and are suitable for use in electric vehicles, renewable energy, and power conversion. In addition, excellent thermal conductivity helps to improve the heat dissipation efficiency of the device and extend its service life.
P-type SiC substrates are widely used in power devices, RF devices, and optoelectronic devices.
They are often used to manufacture devices such as P-type MOSFETs and IGBTs to meet the needs of high voltage, high temperature, and high frequency. In addition, with the development of technology, 4H-P type SiC substrates will play an increasingly important role in future power electronics and smart grids.
Details of P-Type SiC Substrate
|
Propery | P-type 4H-SiC, Single Crystal | P-type 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.082 Å c=10.092 Å | a=3.09 Å c=15.084 Å |
| Stacking Sequence | ABCB | ACBABC |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.23 g/cm3 | 3.0 g/cm3 |
| Therm. Expansion Coefficient | 4.3×10-6/K(⊥Caxis) 4.7×10-6/K( ∥Caxis) | 4.3×10-6/K(⊥Caxis) 4.7×10-6/K( ∥Caxis) |
| Refraction Index @750nm | no = 2.621 ne = 2.671 | no=2.612 ne=2.651 |
| Dielectrc Constant | c~9.66 | c~9.66 |
|
Thermal Conductivity |
3-5 W/cm·K@298K |
3-5 W/cm·K@298K |
| Band-Gap | 3.26 eV | 3.02 eV |
| Break-Down Electrical Field | 2-5×106V/cm | 2-5×106V/cm |
|
Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
Samples of P-Type SiC Substrate
Similar product recommendations
1. 4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um P Grade D Grade SiC Wafer
2. 2" 3" FZ SiO2 Single Crystal IC Chips 100um 200um Dry Wet Oxidation Layer 100nm 300nm
FAQ
1. Q: Compared with N-Type, how about the P-Type?
A: P-Type 4H-SiC substrates, doped with trivalent elements like aluminum, have holes as the majority carriers, providing good conductivity and stability at high temperatures. In contrast, N-Type substrates, doped with pentavalent elements like phosphorus, have electrons as the majority carriers, which typically results in higher electron mobility and lower resistivity.
2. Q: What is the market outlook for P-Type SiC?
A: The market outlook for P-Type SiC is highly positive, driven by increasing demand for high-performance power electronics in electric vehicles, renewable energy systems, and advanced industrial applications.