InAs Indium Arsenide2inch 3inch 4inch Single Crystal Substrate N/P Type Semiconductor Wafer Thickness 300-800um
Indium InAs or indium arsenide monolithic is a semiconductor composed of indium and arsenic. It has a gray cubic crystal appearance and a melting point of 942°C. Indium arsenide is used to construct infrared detectors in the wavelength range of 1-3.8um. The detector is usually a photovoltaic photodiode. Cryocooled detectors are less noisy, but InAs detectors can also be used for high-power applications at room temperature. Indium arsenide is also used in the manufacture of diode lasers. Indium arsenide, similar to gallium arsenide, is a direct bandgap material. Indium arsenide is sometimes used with indium phosphide. Alloys with gallium arsenide to form indium arsenide - a material with a bandgap depending on the In/Ga ratio. This method is mainly similar to the alloying of indium nitride with gallium nitride to produce indium nitride. Indium arsenide is known for its high electron mobility and narrow bandgap. It is widely used as a terahertz radiation source because it is a powerful light amber emitter.
Features
- High electron mobility and mobility (μe/μh=70), making it an ideal material for Hall devices.
- MBE can be grown with GaAsSb, InAsPSb, and InAsSb multi-epitaxial materials.
- Liquid sealing method (CZ) to ensure material purity up to 99.9999% (6N).
- All substrates are precisely polished and filled with a protective atmosphere to meet Epi-Ready requirements.
- Crystal Orientation Selection: Other crystal orientations are available, such as (110).
- Optical measurement techniques, such as ellipsometers, ensure that the surface on each substrate is clean.
Technical Parameters
| crystal | dope | type | Ion carrier concentration cm-3 | mobility(cm2/V.s) | MPD(cm-2) | SIZE | | InAs | un-dope | N | 5*1016 | ³2*104 | <5*104 | Φ2″×0.5mm Φ3″×0.5mm | | InAs | Sn | N | (5-20) *1017 | >2000 | <5*104 | Φ2″×0.5mm Φ3″×0.5mm | | InAs | Zn | P | (1-20) *1017 | 100-300 | <5*104 | Φ2″×0.5mm Φ3″×0.5mm | | InAs | S | N | (1-10)*1017 | >2000 | <5*104 | Φ2″×0.5mm Φ3″×0.5mm | | size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized | | ra | Surface roughness(Ra):<=5A | | polish | single or doubles side polished | | package | 100 grade cleaning plastic bag in 1000 cleaning room | |
Applications
- Infrared optoelectronics: Indium arsenide has excellent infrared light absorption properties and is commonly used in the manufacture of infrared detectors, imagers, and lasers.
- High-frequency electronics: Due to its high electron mobility, indium arsenide is widely used in high-frequency and high-speed electronic devices such as FETs (field-effect transistors) and HEMTs (high electron mobility transistors).
- Quantum dots and quantum wells: In the field of quantum computing and quantum communication, indium arsenide is used to fabricate quantum dots and quantum well structures.
- Optical communications: Indium arsenide can be used to make laser diodes and optical amplifiers in fiber optic communications to improve signal transmission efficiency.
- Thermoelectric materials: Indium arsenide is used as a thermoelectric material in thermoelectric converters and coolers to enable energy recovery and temperature control.
- Sensors: In the field of environmental monitoring and biomedicine, indium arsenide is used in the manufacture of various sensors to detect gases and biomolecules.
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