8inch SiC Silicon Carbide Wafer 4H-N Type P/D/R Grade Mohs.9 Multiple Applications Customization

8inch SiC Silicon Carbide Wafer 4H-N Type P/D/R Grade Mohs.9 Multiple Applications Customization

Product introduction

SiC, commonly referred to as silicon carbide, is a compound formed by combining silicon and carbon. Silicon carbide seed crystal is an important form, which is widely used in semiconductor materials, ceramics, abrasives and other fields. Silicon carbide is second only to diamond in hardness, making it an excellent abrasive and cutting tool. Good thermal conductivity makes it suitable for high-temperature applications such as LEDs and power electronics. Good resistance to chemicals, especially acids and alkalis. Good resistance to chemicals, especially acids and alkalis. Good resistance to chemicals, especially acids and alkalis. Due to its superior properties, silicon carbide seed crystals have become an indispensable material in modern industry and technology.

Growth Techniques

At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals.

Why is 8-inch silicon carbide wafer so difficult to produce?

Compared with silicon chips, the main difference between 8 inch and 6 inch SiC production is in high temperature processes, such as high temperature ion implantation, high temperature oxidation, high temperature activation, and the hard mask (hard mask) process required by these high temperature processes.

In addition to the differences in the production process with silicon wafers, there are also some differences in the development of SiC from 6 inches to 8 inches.

In the ion implantation, film deposition, medium etching, metallization and other links of power semiconductor manufacturing, the difference between 8-inch silicon carbide and 6-inch SiC is not large. The manufacturing difficulties of 8-inch SiC are mainly concentrated in substrate growth, substrate cutting processing, and oxidation process. Among them, the substrate growth, expanding to 8 inches, the difficulty of substrate growth will be doubled; In terms of substrate cutting, the larger the size of substrate, the more significant the problems of cutting stress and warping. The oxidation process has always been the core difficulty in the silicon carbide process, 8 inch, 6 inch on the control of air flow and temperature field have different needs, the process needs to be independently developed.

Product key features

-Breakdown electric field: The breakdown electric field of silicon carbide is about ten times that of silicon, so that silicon carbide devices can work at higher voltages without breakdown due to excessive electric field.

-Thermal conductivity: The thermal conductivity of silicon carbide is three times that of silicon, so that silicon carbide devices can still maintain good heat dissipation performance in high temperature environments.

-Saturated electron migration speed: silicon carbide materials have a higher saturated electron migration speed, making the performance of silicon carbide devices at high frequencies better.

-Working temperature: The working temperature of silicon carbide power devices can reach more than 600 ° C, which is 4 times that of the same silicon devices, and can withstand more extreme working environments.

Product Applications

-Power electronics: 4H-N SiC is used to manufacture high-power, low-loss electronic devices such as power diodes and field-effect transistors (FETs) for applications such as power conversion and electric vehicles.

-High temperature environments: Due to its excellent thermal stability and high temperature resistance, 4H-N SiC is suitable for use in high temperature environments, such as aerospace and automotive electronics.

-Photoelectric devices: Can be used to manufacture blue and ultraviolet light emitting devices, suitable for applications such as lasers and photodetectors.

-Rf devices: In wireless communications and radar systems, the high frequency characteristics of 4H-N SiC make it an ideal choice for RF devices.

-Thermal management materials: Their excellent thermal conductivity makes them useful in radiators and thermal management systems.

-Sensors: Can be used to manufacture highly sensitive sensors for gas detection and environmental monitoring.

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