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Thermo Compression Anodic Bonding Equipment Thermal Pressure Bonding Si Cu Al-Ge Material 600°C 2-8inch
Abstract of Thermo-Compression Anodic Bonding Equipment
Thermo Compression Anodic Bonding Equipment integrates dual-process bonding technology combining thermo-compression and anodic bonding, specifically designed for metallized packaging of 2"-8" wafers (e.g., Si/Cu/Al-Ge systems) with a maximum operating temperature of 600°C. Thermo Compression Anodic Bonding Equipment through precise control of temperature-pressure-voltage parameters, it achieves high-strength hermetic sealing between wafers, making it suitable for packaging applications requiring high temperature resistance and reliability, such as MEMS devices and power semiconductors. The key advantage lies in its simultaneous capability for metal diffusion bonding (thermo-compression) and glass-silicon interface bonding (anodic bonding).
Wafer Bonding System Technical Specifications
| Wafer Size: | 4-8 inch |
| Compatible Materials: | Si, Cu, Au, Au-Sn, Al-Ge, etc. |
| Max Temperature: | 600°C |
| Max Pressure: | 100kN, Control Accuracy ±1% |
| Heating Rate: | 30°C/min |
| Temperature Uniformity: | ≤±2% |
| Anode Voltage and Current: | ≤2kV, ≤100mA |
| Post-Bonding Accuracy: | ≤5μm, ≤2μm |
| Loading Method: | Cassette |
| Multi-mode Integration: | Edge detection, activation, cleaning, alignment, bonding |
| Bonding Atmosphere: | Vacuum, Methanol, Inert Gas (Optional) |
Thermo Compression Anodic Bonding Equipment supports 2"-8" wafer processing with a maximum operating temperature of 600°C, pressure range of 5-200 kN, and vacuum level ≤5×10⁻³ Pa. Thermo Compression Anodic Bonding Equipment incorporates a high-precision closed-loop control system for temperature (±1°C), pressure (fluctuation ≤±1%), and voltage (0-2000 V adjustable for anodic bonding). Compatible with material systems including Si, Cu, and Al-Ge, it is specifically designed for hermetic packaging applications (leak rate ≤1×10⁻⁸ Pa·m³/s) in MEMS and power devices.
Thermal Pressure Bonding
Au-Si bonding:
Working principle:
Thermo Compression Anodic Bonding Equipment:
Alignment Performance of Thermo-Compression Bonding (Accuracy <2μm)
Applications
· MEMS Device Packaging: Thermo Compression Anodic Bonding Equipment achieves hermetic encapsulation for microelectromechanical systems, ensuring long-term operational reliability.
· Power Semiconductor Packaging: Thermo Compression Anodic Bonding Equipment facilitates high-temperature-resistant and thermally conductive interfacial bonding for high-power chips.
· Sensor Hermetic Packaging: Thermo Compression Anodic Bonding Equipment provides moisture/oxidation-proof protective encapsulation for environmentally sensitive sensors.
· Optoelectronic Integration: Thermo Compression Anodic Bonding Equipment enables heteromaterial bonding between optical and electronic components to enhance photoelectric conversion efficiency.
Machining effect——Glass-to-Silicon Anodic Bonding | Al-Ge Eutectic Bonding
Q&A
1. Q: What are the key advantages of thermo-compression anodic bonding compared to standard anodic bonding?
A: Combines metal diffusion bonding strength with glass-Si hermetic sealing, enabling hybrid packaging for MEMS/power devices at lower temperatures (≤600°C).
2. Q: Which materials can be bonded using thermo-compression anodic bonding?
A: Compatible with Si, glass, Cu, and Al-Ge alloys - ideal for MEMS lids, power electronics, and optoelectronic packaging.
Tag: #Thermo Compression Anodic Bonding Equipment, #Thermal Pressure Bonding, #2/4/6/8 inch Bonding, #Si, #Cu, #Al-Ge Material