SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD For The Good Reputation,By The Best Quality ,With The Fastest Efficiency.
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Abstract
Silicon carbide powder (SiC), as a core material for third-generation semiconductors, exhibits high thermal conductivity (490 W/m·K), extreme hardness (Mohs 9.5), and wide bandgap (3.2 eV). It is primarily used for SiC crystal growth, power device substrate preparation, and high-temperature ceramic sintering. With ultra-high purity synthesis (≥99.9999%) and precise particle size control (50 nm–200 μm), it meets the requirements of PVT crystal growth furnaces and CVD epitaxial equipment.
· Purity: 6N-grade (99.9999%) metallic impurity control
· Crystal Form: Controllable 4H/6H polytypes
· Particle Size: Adjustable 50 nm–200 μm (D50 distribution ±5%)
· Doping: Customizable N-type (nitrogen) or P-type (aluminum)
· Crystal Growth: PVT method for 4/6-inch SiC single crystals
· Epitaxial Substrates: Preparation of SiC epitaxial wafers for power devices
· Ceramic Sintering: High-temperature structural components (bearings/nozzles)
ZMSH with expertise in SiC materials and a production facility equipped with PVT crystal growth furnaces, we provide end-to-end solutions from high-purity powders to crystal growth equipment. Our powder purity and particle size consistency lead the industry.
1. Q: Does ZMSH provide customized SiC powder specifications?
A: Yes, we offer tailored particle sizes (50nm-200μm), doping (N/P-type), and polytypes (4H/6H).
2. Q: Can you supply SiC crystal growth equipment along with powders?
A: We provide full-chain solutions, including PVT growth furnaces and CVD systems for epitaxy.
Tag: #High-Purity, #Customized, #Silicon Carbide, #SiC Powder, #Purity 99.9999% (6N), #4H-N Type, #100μm Particle Size, #SIC Crystal Growth