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High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) HPSI Type 100μm Particle Size SIC Crystal Growth

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High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) HPSI Type 100μm Particle Size SIC Crystal Growth

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Brand Name :ZMSH
Model Number :SiC Powder
Certification :rohs
Place of Origin :CHINA
Price :by case
Payment Terms :T/T
Purity :≥ 99.9999% (6N)
Type :4h-n
Mohs Hardness :9.5
Resistivity :0.015~0.028Ω
Grain Size :20-100um
Application :For 4h-n Sic Crystal Growth
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Abstract

High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) HPSI Type 100μm Particle Size SIC Crystal Growth

Silicon carbide powder (SiC), as a core material for third-generation semiconductors, exhibits high thermal conductivity (490 W/m·K), extreme hardness (Mohs 9.5), and wide bandgap (3.2 eV). It is primarily used for SiC crystal growth, power device substrate preparation, and high-temperature ceramic sintering. With ultra-high purity synthesis (≥99.9999%) and precise particle size control (50 nm–200 μm), it meets the requirements of PVT crystal growth furnaces and CVD epitaxial equipment.


Features

· Purity: 6N-grade (99.9999%) metallic impurity control for HPSI-type SiC powder;
· Crystal Form: Controllable 4H/6H polytypes in HPSI SiC powder;
· Particle Size: Adjustable 50 nm–200 μm (D50 distribution ±5%) for high-purity semi-insulating SiC powder;
· Doping: Customizable N-type (nitrogen) or P-type (aluminum) doping in HPSI-grade SiC powder;

High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) HPSI Type 100μm Particle Size SIC Crystal Growth


High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) HPSI Type 100μm Particle Size SIC Crystal Growth

Applications

· Crystal Growth: PVT method for 4/6-inch SiC single crystals

· Epitaxial Substrates: Preparation of SiC epitaxial wafers for power devices

· Ceramic Sintering: High-temperature structural components (bearings/nozzles)

High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) HPSI Type 100μm Particle Size SIC Crystal Growth


ZMSH SIC powder display

ZMSH with expertise in SiC materials and a production facility equipped with PVT crystal growth furnaces, we provide end-to-end solutions from high-purity powders to crystal growth equipment. Our powder purity and particle size consistency lead the industry.

High-Purity Silicon Carbide (SiC) Powder 99.9999% (6N) HPSI Type 100μm Particle Size SIC Crystal Growth


Q&A​

1. Q: What is silicon carbide (SiC) powder used for?
A: Silicon carbide powder is widely used in semiconductor manufacturing, abrasive tools, and refractory materials due to its extreme hardness and thermal stability.

2. Q: What are the advantages of silicon carbide powder over traditional materials?
A: SiC powder offers superior thermal conductivity, chemical inertness, and mechanical strength compared to conventional materials like aluminum oxide or silicon.


Tag: #High-Purity, #Customized, #Silicon Carbide, #SiC Powder, #Purity 99.9999% (6N), #HPSI Type, #100μm Particle Size, #SIC Crystal Growth

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