6inch Sapphire Wafer DSP Diameter 150mm Thickness 350μm For Power Electronics

6inch Sapphire Wafer DSP Diameter 150mm Thickness 350μm For Power Electronics

The 6-inch sapphire wafer is a large-format optical-grade substrate fabricated from single-crystal aluminum oxide (α-Al₂O₃) via Edge-defined Film-fed Growth (EFG) or Kyropoulos (KY) methods, with standardized dimensions of 150mm±0.2mm diameter and customizable thickness (0.3-1.0mm). As a critical substrate for third-generation semiconductors, the 6-inch sapphire wafer combines high optical transmittance (>85% in visible spectrum), low lattice mismatch (13% with GaN), and exceptional mechanical stability, making it ideal for manufacturing high-brightness LEDs, Micro-LEDs, and power electronic devices. Its large-area format significantly enhances epitaxial production efficiency while reducing per-chip costs, driving advancements in optoelectronics and semiconductor industries.

Key Characteristics

1. 6inch sapphire wafer of superior Crystal Quality:

· Dislocation density <10³ cm⁻² with surface roughness Ra<0.3nm (C-plane polished), meeting atomic-level flatness requirements for GaN epitaxy.

· Crystal orientation accuracy ±0.1° (available in C-, R-, and A-plane orientations).

2. 6inch sapphire wafer of optical Performance:

· 85% transmittance in visible spectrum (400-800nm) and >80% in UV range (250-400nm), suitable for UV photonic devices.

· Customizable Double-Side Polished (DSP) or Patterned Sapphire Substrate (PSS) structures to enhance LED light extraction efficiency by >30%.

3. 6inch sapphire wafer of thermal/Mechanical Stability:

· Melting point 2040℃ with matched CTE (5.3×10⁻⁶/℃ to GaN), minimizing thermal stress cracks during epitaxy.

· Plasma-resistant for MOCVD/PECVD deposition processes.

4. 6inch sapphire wafer of large-Area Advantage:

· 50% more usable chip area per 6-inch wafer versus 4-inch equivalents, substantially reducing unit production costs.

---

Technical Parameters

Property	6inch
Diameter	150±0.1mm
Thickness	350±15um
	500 ± 15 um
	1000±15um
Roughness	Ra ≤ 0.2nm
Warp	≤ 15um
TTV	≤ 10um
Scratch/Dig	20/10
Polish	DSP (Double Side Polished); SSP(Single Side Polished)
Shape	Round, Flat 16mm；OF length 22mm; OF Length 30/32.5mm; OF Length47.5mm; NOTCH; NOTCH;
Edge Form	45°,C Shape
Material	Sapphire crystal, Fused Quartz JGS1/JGS2; BF33, D263; EXG glass.
Remarks	All specifications above can be customized upon your request

Primary Applications

1. LED Manufacturing:
6inch sapphire wafer as the primary substrate for GaN epitaxy, 6-inch sapphire wafers enable high-yield production of high-brightness LEDs and Mini/Micro-LED display chips, supporting next-gen ultra-HD displays.

2. Power Electronics:
6inch sapphire wafer is used in GaN-on-sapphire HEMT devices for 5G base stations and EV power inverters requiring high-frequency/high-power operation.

3. Optical Components:
When precision-polished, 6inch sapphire wafer serves as extreme-environment windows (spacecraft) or UV sensor substrates with radiation resistance.

4. Semiconductor Equipment:
6inch sapphire wafer utilized as corrosion-resistant, high-insulation (resistivity >10¹⁴ Ω·cm) carrier plates for etching/ion implantation systems.