SiC Multi-Wafer Carrier Plate Pressureless Sintered Silicon Carbide For Wafer Support

SiC Multi-Wafer Carrier Plate Pressureless sintered silicon carbide for Wafer support

Core Competitiveness of the ZMSH​​:

As a globally leading silicon carbide (SiC) semiconductor material solutions provider, ZMSH has developed proprietary ​​SiC Multi-Wafer Susceptors​​ leveraging ​​ultra-high-purity SiC single-crystal growth technology​​ and ​​advanced coating engineering​​. These susceptors address critical challenges in compound semiconductor manufacturing, including thermal stress cracking and contamination, through:

· ​​Ultra-high thermal stability​​ (operating above 1600°C)
· ​​Nano-scale thermal conductivity control​​ (lateral thermal conductivity >350 W/m·K)
​​· Chemically inert surfaces​​ (resistance to acid/base corrosion per ASTM G31 III)

Validated by 1,200-hour reliability tests at TSMC and Mitsubishi Electric, the product achieves 99.95% yield for ​​6-inch wafer mass production​​ and ​​8-inch process qualification​​.

Technical specification:

Key features of SiC tray

1. Material Innovations​​

- ​​High-Purity SiC Single Crystal​​: Grown via Physical Vapor Transport (PVT) with boron (B) doping <5×10¹⁵ cm⁻³, oxygen (O) content <100 ppm, and dislocation density <10³ cm⁻², ensuring thermal expansion coefficient (CTE) matching SiC wafers (Δα=0.8×10⁻⁶/K).

​​- Nanostructured Coatings​​: Plasma-enhanced Chemical Vapor Deposition (PECVD) of 200nm TiAlN coatings (hardness 30GPa, friction coefficient <0.15) minimizes wafer scratching.

​​2. Thermal Management​​

- ​​Gradient Thermal Conductivity​​: Multi-layer SiC/SiC composites achieve ±0.5°C temperature uniformity across 8-inch carriers.

- ​​Thermal Shock Resistance​​: Survives 1,000 thermal cycles (ΔT=1500°C) without cracking, outperforming graphite carriers by 5× lifespan.

​​3. Process Compatibility​​

- ​​Multi-Process Support​​: Compatible with MOCVD, CVD, and Epitaxy at 600–1600°C and 1–1000 mbar.

- ​​Wafer Size Flexibility​​: Supports 2–12-inch wafers for GaN-on-SiC and SiC-on-SiC heterostructures.

Primary applications of SiC tray

​

1. Compound Semiconductor Manufacturing​​

​​· GaN Power Devices​​: Enables 2.5kV MOSFET epitaxial growth on 4-inch GaN-on-SiC wafers at 1200°C, achieving <5×10⁴ cm⁻² defect density.

· ​​SiC RF Devices​​: Supports 4H-SiC-on-SiC heteroepitaxy for HEMTs with 220 mS/mm transconductance and 1.2 THz cutoff frequency.

​​2. Photovoltaics & LEDs​​

​​· HJT Passivation Layers​​: Achieves <1×10⁶ cm⁻² interfacial defects in MOCVD, boosting solar cell efficiency to 26%.

· ​​Micro-LED Transfer​​: Enables 99.5% transfer efficiency for 5μm LEDs using electrostatic alignment at 150°C.

​​3. Aerospace & Nuclear​​

· ​​Radiation Detectors​​: Produces CdZnTe wafers with <3keV FWHM energy resolution for NASA deep-space missions.

​​· Control Rod Seals​​: SiC-coated carriers withstand 1×10¹⁹ n/cm² neutron irradiation for 40-year reactor lifespans.

Products pictures of SiC tray

ZMSH deliver ​​end-to-end technical solutions​​, spanning material R&D, process optimization, and mass production support. Leveraging ​​high-precision customized manufacturing​​ (±0.001mm tolerance) and ​​nanoscale surface treatment technologies​​ (Ra <5nm), we provide ​​wafer-level carrier solutions​​ for semiconductor, optoelectronics, and renewable energy sectors, ensuring 99.95% yield and performance reliability.