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Silicon Carbide (SiC) Backing Plates / Support Plates are high-performance ceramic components widely used in advanced manufacturing sectors such as semiconductors, LEDs, and photovoltaics. Renowned for their exceptional thermal resistance, corrosion resistance, high thermal conductivity, and rigidity, they are ideal for precision processes. ZMSH provides customized SiC Backing Plate solutions, including design, manufacturing, testing, and after-sales support, ensuring enhanced process stability and production efficiency.
| Parameter | Specification | Unit | Notes |
| Material Type | CVD-SiC / RBSiC / HPSiC | - | Optional |
| Diameter | 100-500 (Customizable) | mm | Custom |
| Thickness | 10-50 | mm | Adjustable |
| Max Operating Temperature | 1650 | °C | Long-term |
| Thermal Conductivity | 120-200 | W/m·K | At 25°C |
| Thermal Expansion Coefficient | 4.0×10⁻⁶ | /°C | RT-1000°C |
| Density | 3.10-3.21 | g/cm³ | Theoretical |
| Porosity | <0.5% | - | Dense |
| Surface Roughness (Ra) | <0.2 (Polished) | μm | Mirror finish |
| Flatness | ≤0.05 | mm/100mm | Precision grade |
| Hardness (Mohs) | 9.2 | - | Second only to diamond |
| Bending Strength | 350-450 | MPa | 3-point |
| Purity | >99.9995% | - | Semiconductor grade |
1. High-Temperature Resistance – Stable operation above 1600°C, suitable for extreme process conditions.
2. Superior Thermal Conductivity – Outperforms traditional materials (e.g., graphite, alumina) for rapid heat dissipation and reduced thermal stress.
3. Low Thermal Expansion – Excellent dimensional stability at high temperatures, minimizing warpage.
4. High Hardness & Wear Resistance – Mohs hardness of 9.2, ensuring long-term durability.
5. Chemical Inertness – Resistant to acids, alkalis, and corrosive environments (e.g., etching, CVD/PVD).
6. High Purity – Metal-free composition, meeting stringent semiconductor industry standards.
1. Process Compatibility
· Semiconductor Manufacturing – Compatible with CVD, MOCVD, and epitaxial growth, ensuring uniform wafer heating.
· LED Production – Supports sapphire substrates for consistent epitaxial layer growth.
· Photovoltaics – Used in high-temperature sintering & thin-film deposition.
· Precision Machining – Suitable for laser cutting, plasma etching, and other high-accuracy processes.
2. Material Types
· Reaction-Bonded SiC (RBSiC) – Cost-effective, ideal for general high-temperature use.
· Chemical Vapor Deposition SiC (CVD-SiC) – Ultra-high purity for advanced semiconductor processes.
· Hot-Pressed SiC (HPSiC) – High density & strength for heavy-load applications.
3. Core Applications
· Wafer/Substrate Support – Ensures uniform thermal distribution in processing.
· Graphite Replacement – Eliminates oxidation and particle contamination risks.
· Etching Equipment – Provides stable plasma environment support.
1. Custom Design – Optimized dimensions, geometry, and surface treatments (e.g., polishing, coatings).
2. Precision Manufacturing – Advanced sintering/CVD techniques for high consistency & reliability.
3. Rigorous Testing – Ultrasonic inspection, thermal cycling, and quality assurance protocols.
4. Rapid Response – Technical consultation, prototyping, and batch production support.
5. Global Support – Worldwide coverage (Asia-Pacific, Europe, Americas) with 24/7 after-sales service.
1. Q: What is the maximum temperature for SiC backing plates?
A: SiC backing plates withstand up to 1650°C continuously, making them ideal for semiconductor CVD/MOCVD processes.
2. Q: Why use SiC instead of graphite for wafer support?
A: SiC offers zero particle contamination, higher rigidity, and longer lifespan than graphite in high-purity wafer processing.
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