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Custom Sic Ceramics Carrier End Effector For Wafer Handling

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Custom Sic Ceramics Carrier End Effector For Wafer Handling

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Brand Name :ZMSH
Model Number :SiC Finger Fork
Certification :rohs
Place of Origin :CHINA
Price :by case
Payment Terms :T/T
Delivery Time :2-4weeks
Density :3.21g/cm ³
Hardness :2500 Vickers hardness
Grain Size :2~10μm
Chemical Purity :99.99995%
Heat Capacity :640J·kg-1 ·K-1
Thermal conductivity :300 (W/mK)
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Abstract of End Effector for Wafer Handling

Customized Sic Ceramics carrier End Effector for Wafer Handling

The wafer handling end effector, manufactured with ultra-precision machining technology, achieves micron-level dimensional accuracy (±0.01mm) and exceptional thermal stability (CTE ≤4.5×10⁻⁶/K). Its surface features an advanced CVD-deposited nanocrystalline SiC protective layer (purity >99.995%), delivering superior surface finish (Ra<0.05μm) and wear resistance (wear rate <0.1μm/1000 cycles), while ensuring damage-free wafer transfer at high speeds (1.5m/s) with minimal particle generation (<5 particles/ft³). Our high-purity SiC-coated end effector demonstrates outstanding performance stability across extreme temperatures (-200°C~1200°C), excellent thermal uniformity (±1°C@150mm wafer) for epitaxial growth thickness consistency (±1.5%), and remarkable chemical resistance (pH1-13), maintaining reliable operation through >100,000 cycles.


Technical specification:

Crystal Structure FCC β phase
Density g/cm ³ 3.21
Hardness Vickers hardness 2500
Grain Size μm 2~10
Chemical Purity % 99.99995
Heat Capacity J·kg-1 ·K-1 640
Sublimation Temperature 2700
Felexural Strength MPa (RT 4-point) 415
Young’ s Modulus Gpa (4pt bend, 1300℃) 430
Thermal Expansion (C.T.E) 10-6K-1 4.5
Thermal conductivity (W/mK) 300


Key features of End Effector for Wafer Handling

Custom Sic Ceramics Carrier End Effector For Wafer Handling

1. Nanoscale SiC Protective Layer via CVD Technology

- Deposited using hot-wall CVD reactor (1200°C) with 20-50nm grain size

- Coating density ≥3.18g/cm³, porosity <0.1%

2. Exceptional High-Temperature Stability & Thermal Uniformity

- Maintains thermal conductivity ≥120W/m·K at 1000°C

-Thermal deformation <0.02mm/100mm (ASTM E228 certified)

3. Ultra-Fine SiC Crystalline Coating for Atomic-Level Smoothness

- Diamond slurry polished to Ra<0.3nm (AFM verified)

- Surface friction coefficient μ<0.15 (vs. silicon wafer)

Custom Sic Ceramics Carrier End Effector For Wafer Handling

4. Superior Chemical Resistance & Cleaning Durability

- Etching rate <0.01μm/cycle in SC1/SC2 solutions

- Passes 2000-cycle ozone water cleaning test (80°C)

5. Proprietary Structural Design Preventing Cracking/Delamination

- Stress buffer layer design (SiC/Si gradient transition)

- Withstands 1000 thermal shock cycles (-196°C~300°C) (MIL-STD-883 compliant)


Primary applications of End Effector for Wafer Handling

1. Semiconductor Front-End Processes:

· Wafer transportation within fabs (AMHS)

· Lithography tool loading/unloading

2. Advanced Packaging:

· Precision alignment for Fan-out and 3D IC stacking

· Ultra-thin wafer handling (<100μm) for GaN/SiC compound semiconductors

3. Vacuum Environments:

· Wafer transfer in PVD/CVD chambers


Process Compatibility, Materials & Applications

Category Specification Technical Parameters
Process Compatibility

High-speed transfer Supports 300mm wafers at ≥1.5m/s, 0.5G acceleration
Ultra-thin wafer handling Stress-free gripping of 50μm wafers (optional vacuum chuck)
Cleanroom compatibility SEMI S2/S8 certified, particle-free operation
Material Types

CVD-SiC Ultra-high purity (Ra<0.1μm), ≤5nm node processes
RBSiC Cost-effective for packaging/test applications
SiC-coated aluminum Lightweight composite for non-critical processes
Core Functions

Traditional end effector replacement Eliminates thermal deformation/contamination (vs quartz/aluminum)
Precision alignment Wafer-to-equipment (robots/process chambers)
Breakage reduction <0.001% breakage rate, improves OEE


Products pictures of End Effector for Wafer Handling

ZMSH is a leading provider of high-performance Silicon Carbide (SiC) wafer handling solutions, specializing in precision-engineered carrier plates and end effectors for semiconductor manufacturing. Our advanced SiC components feature ultra-pure CVD coatings with surface roughness below 0.1μm Ra, ensuring particle-free operation in Class 1 cleanroom environments. The products demonstrate exceptional thermal stability, maintaining dimensional accuracy within ±0.03mm across extreme temperature ranges from -200°C to 1300°C, with thermal expansion coefficients as low as 4.1×10⁻⁶/K.

Custom Sic Ceramics Carrier End Effector For Wafer HandlingCustom Sic Ceramics Carrier End Effector For Wafer Handling


Q&A​

1. Q: What are end effectors in material handling?
A: End effectors are the specialized devices attached to robotic arms that directly interact with and manipulate materials or products during handling operations.

2. Q:What are end effectors used for?
A: They are used for precise gripping, lifting, transferring, or positioning of items in automated systems, particularly in manufacturing and logistics.


Tag: #SiC Finger Fork, #SiC Coated, #SiC Tray, # High-Purity SiC, #High-purity Silicon Carbide, #Customizable, #End Effector for Wafer Handling

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