SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD For The Good Reputation,By The Best Quality ,With The Fastest Efficiency.
Add to Cart
Customized SiC Ceramic Boat Carrier for Wafer Handling
The Customized Silicon Carbide (SiC) Ceramic Boat Carrier is a high-performance wafer handling solution designed for semiconductor, photovoltaic, and LED manufacturing processes. Engineered for high-temperature stability, chemical resistance, and ultra-low contamination, this carrier ensures safe and efficient wafer transport in demanding environments such as CVD, diffusion furnaces, and oxidation chambers.
Key Advantages of SiC Ceramic Boat
High Thermal Stability – Withstands temperatures up to 1,600°Cwithout deformation.
Chemical Inertness – Resists acids, alkalis, and plasma erosion, ensuring long-term durability.
Low Particle Generation – Minimizes contamination in EUV and advanced node fabrication.
Customizable Design – Tailored for wafer size, slot pitch, and handling requirements
Ideal for semiconductor fabs, MEMS production, and compound semiconductor processing
Specification
| Silicon Carbide Content | - | % | >99.5 |
| Average Grain Size | - | micron | 4-10 |
| Bulk Density | - | kg/dm^3 | >3.14 |
| Apparent Porosity | - | Vol % | <0.5 |
| Vickers Hardness | HV0.5 | Kg/mm^2 | 2800 |
| Modulus of Rupture (3 points) | 20°C | MPa | 450 |
| Compression Strength | 20°C | MPa | 3900 |
| Modulus of Elasticity | 20°C | GPa | 420 |
| Fracture Toughness | - | MPa/m^1/2 | 3.5 |
| Thermal Conductivity | 20°C | W(m*K) | 160 |
| Electrical Resistivity | 20°C | Ohm.cm | 10^6-10^8 |
| Coefficient of Thermal Expansion | a (RT"800°C) | K^-1*10^-6 | 4.3 |
| Max. Application Temperature | Oxide Atmosphere | °C | 1600 |
| Max. Application Temperature | Inert Atmosphere | °C | 1950 |
Applications of SiC Ceramic Boat
1. Semiconductor Manufacturing
✔ Diffusion & Annealing Furnaces
- High-Temperature Stability – Withstands 1,600°C (oxidizing) / 1,950°C (inert) without deformation.
- Low Thermal Expansion (4.3×10⁻⁶/K) – Prevents wafer warpage in rapid thermal processing (RTP).
✔ CVD & Epitaxy (SiC/GaN Growth)
- Gas Corrosion Resistance – Inert to SiH₄, NH₃, HCl, and other aggressive precursors.
- Particle-Free Surface – Polished (Ra <0.2μm) for defect-free epitaxial deposition.
✔ Ion Implantation
- Radiation-Hardened – No degradation under high-energy ion bombardment.
2. Power Electronics (SiC/GaN Devices)
✔ SiC Wafer Processing
- CTE Matching (4.3×10⁻⁶/K) – Minimizes stress in 1,500°C+ epitaxial growth.
- High Thermal Conductivity (160 W/m·K) – Ensures uniform wafer heating.
✔ GaN-on-SiC Devices
- Non-Contaminating – No metal ion release vs. graphite boats.
3. Photovoltaic (Solar Cell) Production
✔ PERC & TOPCon Solar Cells
- POCl₃ Diffusion Resistance – Withstands phosphorus doping environments.
- Long Service Life – 5-10 years vs. 1-2 years for quartz boats.
✔ Thin-Film Solar (CIGS/CdTe)
- Corrosion Resistance – Stable in H₂Se, CdS deposition processes.
4. LED & Optoelectronics
✔ Mini/Micro-LED Epitaxy
- Precision Slot Design – Holds fragile 2"–6" wafers without edge chipping.
- Cleanroom-Compatible – Meets SEMI F57 particle standards.
5. Research & Specialty Applications
✔ High-Temp Material Synthesis
- Sintering Aids (e.g., B₄C, AlN) – Chemically inert in 2,000°C+ environments.
- Crystal Growth (e.g., Al₂O₃, ZnSe) – Non-reactive with molten materials.
FAQ
Q1: What wafer sizes are supported?
Standard: 150mm (6"), 200mm (8"), 300mm (12"). Customization available upon request.
Q2: What is the lead time for customized designs?
- Standard models: 4–6 weeks.
- Fully customized: 8–12 weeks (depending on complexity).