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Home / Products / SiC Substrate / 6 inch N-type 6H Silicon Carbide Epitaxy Wafer with 350um Thickness for MEMS and UV Sensors /

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6 inch N-type 6H Silicon Carbide Epitaxy Wafer with 350um Thickness for MEMS and UV Sensors

6 inch N-type 6H Silicon Carbide Epitaxy Wafer with 350um Thickness for MEMS and UV Sensors
  • 6 inch N-type 6H Silicon Carbide Epitaxy Wafer with 350um Thickness for MEMS and UV Sensors
  • 6 inch N-type 6H Silicon Carbide Epitaxy Wafer with 350um Thickness for MEMS and UV Sensors
  • 6 inch N-type 6H Silicon Carbide Epitaxy Wafer with 350um Thickness for MEMS and UV Sensors
  • 6 inch N-type 6H Silicon Carbide Epitaxy Wafer with 350um Thickness for MEMS and UV Sensors
Products Detailed
Product description: Our 6H-Polytype N-Type Silicon Carbide Epitaxial Wafer is engineered for high-performance optoelectronics, harsh-environment ...
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